首页> 外国专利> GRAPHENE FLUORINATION FOR INTEGRATION OF GRAPHENE WITH INSULATORS AND DEVICES

GRAPHENE FLUORINATION FOR INTEGRATION OF GRAPHENE WITH INSULATORS AND DEVICES

机译:石墨烯氟化法将石墨烯与绝缘体和设备结合在一起

摘要

Embodiments of the present disclosure describe multilayer graphene assemblies including layers of fluorinated graphene, dies and systems that include such structures, as well as manufacturing methods. The fluorinated graphene provides an insulating interface to the other graphene layers while maintaining the desired properties of the non-fluorinated graphene layers. The assemblies use graphene in integrated circuit devices and provide new options for interfacing graphene with other materials. Other embodiments may be described and / or claimed.
机译:本公开的实施例描述了包括氟化石墨烯层,模具和包括这种结构的系统的多层石墨烯组件,以及制造方法。氟化石墨烯提供与其他石墨烯层的绝缘界面,同时保持非氟化石墨烯层的所需性能。该组件在集成电路器件中使用石墨烯,并提供了将石墨烯与其他材料连接的新选择。可以描述和/或要求保护其他实施例。

著录项

  • 公开/公告号KR20170019338A

    专利类型

  • 公开/公告日2017-02-21

    原文格式PDF

  • 申请/专利权人 인텔 코포레이션;

    申请/专利号KR20167030578

  • 发明设计人 카우디요 로만;아브지 우가;

    申请日2014-06-13

  • 分类号H01L21/02;H01L23/532;H01L29/51;H01L29/66;

  • 国家 KR

  • 入库时间 2022-08-21 13:28:04

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