首页> 外国专利> GRAPHENE FLUORINATION FOR INTEGRATION OF GRAPHENE WITH INSULATORS AND DEVICES

GRAPHENE FLUORINATION FOR INTEGRATION OF GRAPHENE WITH INSULATORS AND DEVICES

机译:石墨烯氟化法将石墨烯与绝缘体和设备结合在一起

摘要

Embodiments of the present disclosure describe multi-layer graphene assemblies including a layer of fluorinated graphene, dies and systems containing such structures, as well as methods of fabrication. The fluorinated graphene provides an insulating interface to other graphene layers while maintaining the desirable characteristics of the nonfluorinated graphene layers. The assemblies provide new options for utilizing graphene in integrated circuit devices and interfacing graphene with other materials. Other embodiments may be described and/or claimed.
机译:本公开的实施例描述了多层石墨烯组件,其包括氟化石墨烯层,裸片和包含这种结构的系统,以及制造方法。氟化石墨烯提供了与其他石墨烯层的绝缘界面,同时保持了非氟化石墨烯层的理想特性。这些组件为在集成电路器件中利用石墨烯以及将石墨烯与其他材料连接提供了新的选择。可以描述和/或要求保护其他实施例。

著录项

  • 公开/公告号EP3155659A4

    专利类型

  • 公开/公告日2018-02-21

    原文格式PDF

  • 申请/专利权人 INTEL CORPORATION;

    申请/专利号EP20140894479

  • 发明设计人 CAUDILLO ROMAN;AVCI UYGAR;

    申请日2014-06-13

  • 分类号H01L29/16;H01L29/778;H01L29/66;H01L29/423;H01L21/02;H01L21/04;H01L23/14;H01L23/18;

  • 国家 EP

  • 入库时间 2022-08-21 13:17:08

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