FREE LAYER HAVING LOW BORON CONCENTRATION REGION AND HIGH BORON CONCENTRATION REGION, MAGNETO-RESISTIVE CELL, MAGNETO-RESISTIVE MEMORY DEVICE, AND METHOD OF FABRICATING SAME

摘要

Disclosed is a method of forming a magneto-resistive memory device, capable of improving data preservation characteristics while reducing power consumption. The method of forming a magneto-resistive memory device includes the steps of: forming a magnetic layer; forming a tunneling barrier layer on the magnetic layer; forming a first preliminary free layer containing boron on the tunneling barrier layer; forming a first buffer layer on the first preliminary free layer; performing a first annealing process to convert the first preliminary free layer into a second preliminary free layer and the first buffer layer into a first boride layer; performing an etching process to remove the first boride layer; forming a second buffer layer on the second preliminary free layer; performing a second annealing process to convert the second preliminary free layer into a free layer and the second buffer layer into a second boride layer; and performing an oxidation process to convert the second boride layer into an oxide layer.;COPYRIGHT KIPO 2017