CIRCUITS AND DEVICES BASED ON ENHANCED SPIN HALL EFFECT FOR EFFICIENT SPIN TRANSFER TORQUE

摘要

The devices or circuit based on the spin torque transfer (STT) and the spin Hall effect are described by using a coupled spin Hall effect (SHE) metal layer on the free magnetic layer for a variety of applications. Efficiency or strength of the STT effect based on such a combination of SHE, and STT will By by interfacial strain between SHE metal layer and the magnetic free layer, or of the materials to SHE metal layer by doping the SHE metal with a specific impurity or other means It can be improved.