Circuits and devices based on enhanced spin hall effect for efficient spin transfer torque

摘要

Devices or circuits based on spin torque transfer (STT) and Spin Hall effect are disclosed by using a spin Hall effect (SHE) metal layer coupled to a magnetic free layer for various applications. The efficiency or strength of the STT effect based on this combination of SHE and STT can be enhanced by an interface modification between the SHE metal layer and the magnetic free layer or by modifying or engineering the SHE metal layer by doping the SHE metal with certain impurities or other means.