Advances in spintronics devices for microelectronics — From spin-transfer torque to spin-orbit torque

摘要

Recent advances in spintronics devices make it possible to open a new era of microelectronics. In this paper, we review the spintronics devices utilizing spin-transfer torques (STTs) and spin-orbit torques (SOTs) developed in recent years. The progresses of two-terminal STT device with CoFeB-MgO based magnetic tunnel junction (MTJ), three-terminal magnetic domain wall (DW) motion device with Co/Ni multilayer, and three-terminal SOT device with Cu-based channel are described. Integrated circuits with the developed spintronics devices are also reviewed.