2D Photodetector using bandgap-engineered 2D materials and method of manufacturing the same

摘要

Disclosed are a photodetector for inserting a barrier layer having a bandgap larger than a light absorption layer between a graphene layer and a light absorption layer to reduce the flow of dark current that may occur before light is incident on a photodetector, and a manufacturing method thereof. The disclosed photodetector includes: a substrate; an insulating layer formed on the substrate; a first graphene layer formed on the insulating layer; a 2D material layer formed on the first graphene layer; a second graphene layer formed on the 2D material layer; a first electrode formed on the first graphene layer; and a second electrode formed on the second graphene layer, wherein the 2D material layer includes a barrier layer and a light absorbing layer, and the barrier layer has a band gap larger than that of the light absorbing layer.