3 Method of initializing and programing 3 dimensional non-volatile memory device

摘要

The present invention relates to a method to initialize a three-dimensional nonvolatile memory device and a programming method thereof. According to an embodiment of the present invention, the initializing method includes: an initial leveling step of programming a threshold value of string selection transistors, combined with a plurality of string selection lines of one or all of memory layers, at the same target level; a step of applying a time-variant erasure voltage signal with a time-variant section to a plurality of channel lines of a memory layer selected from the memory layers having the initially leveled string selection transistors; and a threshold value setting step of controlling an erasure degree by controlling each of the string selection lines of the selected memory layer in the time-variant section of the time-variant erasure voltage signal so that the string selection transistors combined with the string selection lines have set threshold values.