SPIN-ORBIT TORQUE BIT DESIGN FOR IMPROVED SWITCHING EFFICIENCY

摘要

A method for a spin-orbital torque MRAM (SOT-MRAM) memory cell that reduces the current required to switch non-volatile memory cells, specifically, individual bits, is disclosed. The memory cell includes a first interconnect line having a first longitudinal axis, an elliptical MTJ bit ("bit") having a major axis, and a second interconnect line having a second longitudinal axis perpendicular to the first interconnect line do. The bit includes a polarized free layer, a barrier layer, and a polarized reference layer having a fixed magnetic moment at an angle different from the long axis. By arranging the major axis at the angles relative to the aforementioned first, second and third reference axes and by applying a voltage to the interconnect line, a non-zero equilibrium angle can be induced between the free layer and the spin current or Rashibar field Which can result in coherent switching dynamics.