Electric field control of spin-orbit torque magnetization switching in a spin-orbit ferromagnet (Ga,Mn)As single layer

摘要

Current-induced spin-orbit torque (SOT) has been proposed as a promising method to control the magnetization of ferromagnetic materials, which can dramatically improve the performance of spintronic devices, such as magnetoresistive random access memory (MRAM). To achieve desirable magnetization switching and to realize the multifunctional spin logic and memory devices, efficient manipulation of SOT is important. It was reported that SOT magnetization switching can be manipulated by controlling the interfacial oxidization in bilayer systems and the density and type of surface carriers in topological insulators. However, the switching efficiency is limited and the switching process remains to be improved.