LOW DARK CURRENT AVALANCHE PHOTODIODE

摘要

The present invention relates to a low dark current avalanche photodiode. The low dark current avalanche photodiode comprises an amplification layer comprising a multiplication region formed at the center of the amplification layer and an electrode disposed at a light receiving part on the upper side of the amplification layer. The electrode is arranged to include a multiplexing region and a portion of a non-multiplexing region. So, it is possible to realize a photodiode having a lower dark current with the same thickness and size of the amplification layer.;COPYRIGHT KIPO 2017