首页> 外国专利> PHOTOMASK SUBSTRATE PHOTOMASK BLANK PHOTOMASK METHOD FOR MANUFACTURING PHOTOMASK SUBSTRATE METHOD FOR MANUFACTURING PHOTOMASK AND METHOD FOR MANUFACTURING DISPLAY DEVICE

PHOTOMASK SUBSTRATE PHOTOMASK BLANK PHOTOMASK METHOD FOR MANUFACTURING PHOTOMASK SUBSTRATE METHOD FOR MANUFACTURING PHOTOMASK AND METHOD FOR MANUFACTURING DISPLAY DEVICE

机译:光电基板光电掩模空白光电二极管制造方法光电基板光电制造方法及显示装置的制造方法

摘要

A photomask substrate capable of minimizing the possibility of generating foreign matter in the cleaning process and capable of suppressing the risk of occurrence of defects in a photomask blank or a photomask manufacturing process. A photomask substrate made of a transparent material for forming a transfer pattern and used as a photomask, comprising: a first main surface for forming a transfer pattern; a second main surface on a back side of the transfer pattern; Respectively. An inclined region is formed near the end of the first main surface, and the inclined region has a first chamfered surface and a first curved surface formed between the first major surface and the first chamfered surface. The first chamfered surface has an inclination angle of 50 degrees or less with respect to the first major surface, and has a plane. The curvature radius r1 (mm) of the first curved surface satisfies 0.3 r1, and the surface roughness Ra of the first curved surface and the first chamfered surface is less than 0.05 mu m.
机译:一种光掩模基板,其能够使在清洗过程中产生异物的可能性最小化,并且能够抑制在光掩模坯料或光掩模制造过程中出现缺陷的风险。一种由透明材料制成的用于形成转印图案的光掩模基板,并用作光掩模,包括:第一主表面,用于形成转印图案;转印图案的背面上的第二主表面;分别。在第一主表面的端部附近形成有倾斜区域,该倾斜区域具有第一斜切面和形成在第一主面与第一斜切面之间的第一弯曲面。第一斜切表面相对于第一主表面具有50度或更小的倾斜角,并且具有平面。第一曲面的曲率半径r1(mm)满足0.3 <r1,第一曲面和第一斜切面的表面粗糙度Ra小于0.05μm。

著录项

  • 公开/公告号KR20170078528A

    专利类型

  • 公开/公告日2017-07-07

    原文格式PDF

  • 申请/专利权人 호야 가부시키가이샤;

    申请/专利号KR20160176685

  • 发明设计人 야마구찌 노보루;

    申请日2016-12-22

  • 分类号G03F1;G03F1/20;G03F1/60;G03F1/66;G03F1/80;

  • 国家 KR

  • 入库时间 2022-08-21 13:27:06

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