首页> 外国专利> INFRARED LIGHT EMITTING DIODE HAVING HIGHLY EFFICIENT DBR REFLECTIVE LAYER AND MANUFACTURING METHOD THEREOF

INFRARED LIGHT EMITTING DIODE HAVING HIGHLY EFFICIENT DBR REFLECTIVE LAYER AND MANUFACTURING METHOD THEREOF

机译：具有高效DBR反射层的红外发光二极管及其制造方法

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摘要

The present invention relates to an infrared light emitting diode having a highly efficient distributed Bragg reflector (DBR) reflective layer and a manufacturing method thereof. More specifically, the infrared light emitting diode locates a highly efficient DBR reflective layer in a lower portion of a diode which emits an infrared ray to reflect infrared light.;COPYRIGHT KIPO 2017

机译：本发明涉及具有高效的分布式布拉格反射器（DBR）反射层的红外发光二极管及其制造方法。更具体地说，红外发光二极管将高效的DBR反射层放置在二极管的下部，该下部会发出红外线以反射红外光。; COPYRIGHT KIPO 2017

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公开/公告号KR20170102157A

专利类型
公开/公告日2017-09-07

原文格式PDF
申请/专利权人 AUK CORP.;
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申请/专利号KR20170108436
发明设计人 SO JIN SUKR;LEE HYUNG JOOKR;
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申请日2017-08-28
分类号H01L33/10;H01L21/205;H01L33/50;
国家 KR
入库时间 2022-08-21 13:26:42

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