SYSTEMS AND METHODOLOGIES FOR VAPOR PHASE HYDROXYL RADICAL PROCESSING OF SUBSTRATES

摘要

The present invention provides a device and method for processing a substrate. The method comprises positioning the substrate in a processing chamber of a substrate processing system. The substrate includes a layer of a carbon-containing material on a working surface of the substrate. The method also comprises the following steps: receiving hydrogen peroxide vapor in a vapor treatment region of the substrate processing system; generating hydroxyl radical vapor by treating the hydrogen peroxide vapor in the vapor treatment region; and directing the hydroxyl radical vapor and remaining hydrogen peroxide vapor to the working surface of the substrate causing the carbon-containing material to be chemically modified.