首页> 外国专利> ALD/CVD - ORGANOSILANE PRECURSORS FOR ALD/CVD SILICON-CONTAINING FILM APPLICATIONS AND METHODS OF USING THE SAME

ALD/CVD - ORGANOSILANE PRECURSORS FOR ALD/CVD SILICON-CONTAINING FILM APPLICATIONS AND METHODS OF USING THE SAME

机译:用于含ALD / CVD硅薄膜的ALD / CVD-有机硅烷前体及其使用方法

摘要

Organosilane precursors, methods for their synthesis, and methods for their use in depositing silicon-containing films using a deposition process are disclosed. Disclosed organosilane precursor has the formula SiH x (RN- (CR) n -NR) y (NRR) having a z, in which R is independently H, C 1 to C 6 alkyl group, or a C 3 -C 20 each X + y + z = 4, and n, x, y, and z are integers, with the proviso that when y = 1, x? Preferably, n = 1 to 3, x = 0 to 2, y = 1 or 2, and z = 1 to 3.
机译:公开了有机硅烷前体,其合成方法以及其用于通过沉积工艺沉积含硅膜的方法。公开的有机硅烷前体具有式 SiH x(RN-(CR)n -NR)y(NRR),具有 z ,其中R独立地为H,C 1 至C 6 烷基,或C 3 -C 20 ,每个X + y + z = 4,并且n,x,y和z是整数,前提是当y = 1时,x?优选地,n = 1至3,x = 0至2,y = 1或2,并且z = 1至3。

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