Method of fabricating integrated digital x-ray image sensor and integrated digital x-ray image sensor using the same

摘要

The present invention provides a method of manufacturing a semiconductor device, comprising: forming a plurality of photodiode units on at least a portion of a substrate having a first side and a second side; Forming a mold on the first surface to correspond to the plurality of photodiode units; Forming a micro structure having irregularities by etching at least a part of the mold by a predetermined depth; And forming a scintillator in a concave portion of the microstructure, the scintillator being capable of converting an X-ray into a wavelength band that can be detected by the photodiode unit, And forming a plurality of photodiode units on at least a portion of the substrate having the second surface; Forming a micro structure having concavities and convexities by etching at least a part of the second surface to a predetermined depth so as to correspond to the plurality of photodiode units; And forming a scintillator in a concave portion of the microstructure capable of converting an X-ray into a wavelength band that can be detected by the photodiode unit. A manufacturing method of an image sensor and an integrated digital X-ray image sensor using the same are provided.;