ANALYSIS METHOD AND APPARATUS FOR LINE EDGE ROUGHNESS IN SIDEWALL OF THREE-DIMENSIONAL SEMICONDUCTOR DEVICE

摘要

An analysis method for line edge roughness in a sidewall of a three-dimensional (3D) semiconductor device may comprise the steps of: extracting a variable used for a 2D auto correlation function (2D ACF) from a random rough surface; calculating the two-dimensional auto correlation function based on the variable; and extracting a 3D line edge roughness sequence by applying the 2D auto correlation function to Fourier synthesis method.;COPYRIGHT KIPO 2017