- STRAINED MULTILAYER RESISTIVE-SWITCHING MEMORY ELEMENTS

摘要

The resistive-switching memory element of the present invention comprises a first electrode, a resistive-switching element; Wherein the resistive-switching element is arranged between the first electrode and the second electrode, and the resistive-switching element comprises a plurality of metal oxide layers or a plurality of metal oxide layers, and the resistive-The neighboring metal oxide layers of the switching element comprise different metal oxides or are comprised of different metal oxides.;