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Crucible for metal thin film deposition and evaporation source having the same

机译:用于金属薄膜沉积的坩埚和具有该坩埚的蒸发源

摘要

According to an aspect of the present invention, there is provided a metal thin film deposition crucible for forming a metal thin film on a substrate while containing a vaporization material of metal and being melted and melted by heating to form a metal thin film deposition crucible, And a step portion extending inward from the inner wall of the body portion so as to form a first molten hole in a depth direction at the center of the body portion, wherein the plurality of first molten holes are concentrically formed around the first molten hole There is provided a metal thin film deposition crucible in which a second molten hole is formed.
机译:根据本发明的一个方面,提供了一种金属薄膜沉积坩埚,其用于在基板上形成金属薄膜,同时包含金属的汽化材料并且通过加热而熔融并熔化以形成金属薄膜沉积坩埚,台阶部从主体部的内壁向内延伸,以在主体部的中央在深度方向上形成第一熔孔,其中,多个第一熔孔同心地围绕第一熔孔形成。提供了一种金属薄膜沉积坩埚,其中形成了第二熔融孔。

著录项

  • 公开/公告号KR101761700B1

    专利类型

  • 公开/公告日2017-07-28

    原文格式PDF

  • 申请/专利权人 주식회사 선익시스템;

    申请/专利号KR20150181752

  • 发明设计人 박현식;최재수;오영만;

    申请日2015-12-18

  • 分类号H01L51/56;H01L21/22;H01L21/324;H01L21/67;H01L51;

  • 国家 KR

  • 入库时间 2022-08-21 13:25:06

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