, ;where H=60 mm -specifies the line size of the substrate, l=280-380 mm - distance between the evaporator and the substrate during deposition speed 0.5-1 nm/s Then carry out oxidation in air at a temperature of 300-480°C to the formation of vanadium oxide film on a substrate with controlled quantities of surface resistance in the range⋅1-2,4⋅106 Ohm/cm2. Invention allows to get the loop thermal hysteresis width 22-24°C, shifted by ~ 10°C in the direction of room temperature, with a jump of resistance inside the loop and a half orders of magnitude that when thermostating provides internal memory mode.;EFFECT: improved properties.;5 dwg, 1 ex, 2 tbl"/>
公开/公告号RU2623573C1
专利类型
公开/公告日2017-06-27
原文格式PDF
申请/专利号RU20160117223
申请日2016-04-29
分类号C23C14/24;C23C14/08;C23C14/58;H01C17/10;
国家 RU
入库时间 2022-08-21 13:23:29