, ;where H=60 mm -specifies the line size of the substrate, l=280-380 mm - distance between the evaporator and the substrate during deposition speed 0.5-1 nm/s Then carry out oxidation in air at a temperature of 300-480°C to the formation of vanadium oxide film on a substrate with controlled quantities of surface resistance in the range⋅1-2,4⋅106 Ohm/cm2. Invention allows to get the loop thermal hysteresis width 22-24°C, shifted by ~ 10°C in the direction of room temperature, with a jump of resistance inside the loop and a half orders of magnitude that when thermostating provides internal memory mode.;EFFECT: improved properties.;5 dwg, 1 ex, 2 tbl"/> METHOD OF MANUFACTURE OF FILM MATERIAL BASED ON MIXTURE OF VO<Sub>X</Sub> PHASES, WHERE X = 1,5-2,02
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METHOD OF MANUFACTURE OF FILM MATERIAL BASED ON MIXTURE OF VOX PHASES, WHERE X = 1,5-2,02

机译:X = 1,5-2,02的VO X 相混合的薄膜材料制造方法

摘要

FIELD: chemistry.;SUBSTANCE: method involves thermovacuum spraying of vanadium onto a substrate at room temperature, followed by oxidation in air to form an oxide film. Vanadium coating, thickness 30≤d≤40 nm, doped with impurities W, Si, Al, produced from the evaporator is located inside the vacuum installation by doing one of the following: ; , ;where H=60 mm -specifies the line size of the substrate, l=280-380 mm - distance between the evaporator and the substrate during deposition speed 0.5-1 nm/s Then carry out oxidation in air at a temperature of 300-480°C to the formation of vanadium oxide film on a substrate with controlled quantities of surface resistance in the range⋅1-2,4⋅106 Ohm/cm2. Invention allows to get the loop thermal hysteresis width 22-24°C, shifted by ~ 10°C in the direction of room temperature, with a jump of resistance inside the loop and a half orders of magnitude that when thermostating provides internal memory mode.;EFFECT: improved properties.;5 dwg, 1 ex, 2 tbl
机译:领域:化学;方法:该方法涉及在室温下将钒热真空喷涂到基底上,然后在空气中氧化以形成氧化膜。通过执行以下操作之一,在真空装置内放置厚度为30≤d≤40nm的掺杂有由蒸发器产生的杂质W,Si,Al的钒涂层: ,其中H = 60毫米-指定基材的线尺寸,l = 280 -380毫米-沉积速度为0.5-1 nm / s时蒸发器与基材之间的距离,然后在空气中以300-480°C的温度进行氧化,从而在表面受控量的基材上形成氧化钒膜电阻在⋅1-2,4⋅10 6 Ohm / cm 2 范围内。本发明允许获得环路热滞宽度22-24℃,在室温方向上偏移〜10℃,环路内的电阻跳变,并且在恒温时提供内部存储模式时降低了一半数量级。 ;效果:改进的性能。; 5 dwg,1 ex,2 tbl

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