Power semiconductor module with an electrically insulating and thermally highly conductive layer

摘要

Power semiconductor module with - a carrier as a heat sink with an uneven profiled surface, an applied on at least partial areas of the carrier by cold gas spraying, intimately connected to the carrier and good heat transfer coupled to this first layer by sprayed, fused together particles of at least one electrically insulating, a thermally conductive material is formed, a metallic second layer injected by cold gas spraying of metallic particles onto partial regions of the first layer, which is intimately coupled to the first layer, is heat-transfer-coupled to form an electrically conductive wiring plane, and - a power semiconductor the metallic layer is applied, wherein the first layer electrically isolates the second layer from the carrier with respect to high currents or electrical voltages with which the power semiconductor is operated profiled.