Crucible for the production of silicon ingots, process for its production and silicon ingots

摘要

The invention relates to a crucible for the production of silicon ingots with a crucible bottom and crucible walls, the crucible bottom at least partially having a silicon nitride-containing coating having a root mean square value of at least 10 microns and a layer thickness of at least 30 microns. The invention likewise relates to a method for coating crucibles which are suitable for producing silicon ingots and to silicon ingots produced in this way.