Crucible with an inner coating of SiC as a diffusion barrier for metals and process for its preparation, use and semiconductor crystals produced therein

摘要

The invention relates to a method for coating a crucible, wherein the coating represents a diffusion barrier for metal atoms. By applying a coating by the method according to the invention, it is possible to minimize the metallic impurity content of the semiconductor crystals produced in the crucible. Furthermore, the invention relates to a crucible produced by this method with an inner coating and its fields of application. The semiconductor crystals produced in the crucible are of particularly high quality and purity, since the total contamination in the crystal volume is reduced and the very heavily contaminated edge regions are reduced. Silicon blocks produced in this way are of particular interest to the photovoltaic industry.