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CRUCIBLE FOR MELTING AND CRYSTALLIZING A METAL, A SEMICONDUCTOR, OR A METAL ALLOY, COMPONENT FOR A CRUCIBLE BASE BODY OF A CRUCIBLE, AND METHOD FOR PRODUCING A COMPONENT
CRUCIBLE FOR MELTING AND CRYSTALLIZING A METAL, A SEMICONDUCTOR, OR A METAL ALLOY, COMPONENT FOR A CRUCIBLE BASE BODY OF A CRUCIBLE, AND METHOD FOR PRODUCING A COMPONENT
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机译:用于坩埚的坩埚基体的金属,半导体或金属合金的熔化和结晶的坩埚及其制造方法
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摘要
The invention relates to a crucible for melting and crystallizing a metal, a semiconductor material, or a metal alloy, wherein a crucible wall of a crucible base body is made at least partially of a crucible material comprising silicon nitride and silicon dioxide at a weight ratio of between about 1:10 and about 1:1 (Si3N4 : SiO2). The invention further relates to a component for a crucible base body of a crucible for melting and crystallizing a metal, a semiconductor material, or a metal alloy, wherein a component segment is made at least partially of a crucible material comprising silicon nitride and silicon dioxide at a weight ratio of between about 1:10 and about 1:1 (Si3N4 : SiO2), and to a method for producing a component for a crucible base of a crucible for melting and crystallizing a metal, a semiconductor material, or a metal alloy, wherein a component segment is formed at least partially of a crucible material comprising silicon nitride and silicon dioxide at a weight ratio of between about 1:10 and about 1:1 (Si3N4 : SiO2).
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机译:本发明涉及一种用于使金属,半导体材料或金属合金熔融和结晶的坩埚,其中,坩埚基体的坩埚壁至少部分地由重量比包括氮化硅和二氧化硅的坩埚材料制成。大约在1:10和1:1之间(Si 3 Sub> N 4 Sub>:SiO 2 Sub>)。本发明还涉及一种用于使金属,半导体材料或金属合金熔融和结晶的坩埚的坩埚基体的部件,其中,该部件段至少部分地由包括氮化硅和二氧化硅的坩埚材料制成。重量比约为1:10和1:1(Si 3 Sub> N 4 Sub>:SiO 2 Sub>),用于生产用于使金属,半导体材料或金属合金熔融和结晶的坩埚的坩埚基体的部件的方法,其中部件段至少部分地由重量比包括氮化硅和二氧化硅的坩埚材料形成大约在1:10和1:1之间(Si 3 Sub> N 4 Sub>:SiO 2 Sub>)。
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