ACTIVE PIXEL IMAGE SENSOR IN ELECTRON MULTIPLICATION CMOS TECHNOLOGY

摘要

In a CMOS active pixel including an amplification stage AMP with isolated grids between the photosensitive element PH of the pixel and a read node SN associated with a charge / voltage conversion circuit, an intermediate grid Gpiv is produced between the two grids d accumulation of the amplification stage with one of the two transfer gates located one between the photodiode and an accumulation gate and the other between the other accumulation gate and the read node. The adjacent accumulation grid G1 is completely included in the transfer grid TR1, defining on one side of the accumulation grid, a grid part between the two accumulation grids which is narrower than a main part of transfer grid on the opposite side, and this narrower part forms the spacer grid Gpiv. In this way it is possible to adjust the barrier height of the region under the intermediate grid which forms a pivot region for the tilting of charges from one accumulation region to another.