ACTIVE PIXEL IMAGE SENSOR BASED ON CMOS TECHNOLOGY WITH ELECTRON MULTIPLICATION

摘要

In an active pixel image sensor using CMOS technology formed within a substrate of a first type of conductivity P, each pixel comprises a photosensitive element PHD producing charges under the effect of light and a structure for multiplication of charges EM. The multiplication structure comprises at least one isolated multiplication gate G1, G2 adjacent to a pinned diode DI at a fixed internal potential V_bi, and the isolated gate is adapted for receiving a series of alternations of potentials, alternately creating under the isolated gate a charge collection well and a barrier, relative to the internal potential level of the diode DI. The isolated gate and the semiconductor region under the isolated gate are configured in such a manner that the charge collection well created under the gate comprises two parts: a first part a, adjacent to the pinned diode, at a potential level further from the photodiode internal potential level than that of a second part b, this second part being adjacent or not to the pinned diode.