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ACTIVE PIXEL IMAGE SENSOR BASED ON CMOS TECHNOLOGY WITH ELECTRON MULTIPLICATION
ACTIVE PIXEL IMAGE SENSOR BASED ON CMOS TECHNOLOGY WITH ELECTRON MULTIPLICATION
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机译:基于CMOS技术的电子倍增有源像素图像传感器。
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摘要
In an active pixel image sensor using CMOS technology formed within a substrate of a first type of conductivity P, each pixel comprises a photosensitive element PHD producing charges under the effect of light and a structure for multiplication of charges EM. The multiplication structure comprises at least one isolated multiplication gate G1, G2 adjacent to a pinned diode DI at a fixed internal potential Vbi, and the isolated gate is adapted for receiving a series of alternations of potentials, alternately creating under the isolated gate a charge collection well and a barrier, relative to the internal potential level of the diode DI. The isolated gate and the semiconductor region under the isolated gate are configured in such a manner that the charge collection well created under the gate comprises two parts: a first part a, adjacent to the pinned diode, at a potential level further from the photodiode internal potential level than that of a second part b, this second part being adjacent or not to the pinned diode.
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