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GATE-ALL-AROUND SEMICONDUCTOR DEVICE WITH TWO GROUP III-V SEMICONDUCTOR NANOWIRES
GATE-ALL-AROUND SEMICONDUCTOR DEVICE WITH TWO GROUP III-V SEMICONDUCTOR NANOWIRES
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机译:具有两个III-V组半导体纳米线的全栅全围半导体器件
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摘要
A gate-all-around semiconductor device and a method for manufacturing a gate-all-around (GAA) semiconductor device are disclosed. The method comprises providing on a semiconductor substrate (100) in between STI regions (101) at least one suspended nanostructure (105) anchored by a source (121) and a drain region (122), the suspended nanostructure comprising a crystalline semiconductor material which is different from the semiconductor substrate. A gate stack (117) is provided around the at least one suspended nanostructure.
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