METHOD FOR MANUFACTURING NONVOLATILE MEMORY THIN FILM DEVICE BY USING NEUTRAL PARTICLE BEAM GENERATION APPARATUS

摘要

A method for manufacturing a nonvolatile memory thin film device by using a neutral particle beam generation apparatus is disclosed. The present invention relates to a method for manufacturing a nonvolatile memory thin film device by using a neutral particle beam generation apparatus including a chamber, which is a plasma discharge space and has a predetermined size, a gas supply port for supplying gas to the inside of the chamber, and a reflector colliding with plasma ions generated in the chamber so as to convert the plasma ions into neutral particles, the method including: arranging, in the chamber, a substrate on which a first insulating film is formed; supplying, to the inside of the chamber, hydrogen gas for generating hydrogen plasma and inert gas for generating plasma through the gas supply port; converting hydrogen plasma ions generated in the chamber into hydrogen neutral particles by colliding the hydrogen plasma ions with the reflector; forming a mobile proton layer by accumulating the hydrogen neutral particles on a surface of the first insulating film; and forming a second insulating film on the mobile proton layer.