CHEMICAL VAPOR DEPOSITION FEEDSTOCK COMPRISING ORGANIC RUTHENIUM COMPOUND AND CHEMICAL VAPOR DEPOSITION METHOD USING SAID CHEMICAL VAPOR DEPOSITION FEEDSTOCK

摘要

The present invention relates to a chemical vapor deposition raw material for producing a ruthenium thin film or a ruthenium compound thin film by a chemical deposition method, including an organoruthenium compound in which two diazadiene ligands and two alkyl ligands are coordinated to ruthenium, the organoruthenium being represented by the following formula. The organoruthenium compound to be applied in the present invention can be used for low-temperature deposition, and capable of forming a ruthenium thin film or a ruthenium compound thin film without use of an oxygen gas.