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RADIATION-EMITTING SEMICONDUCTOR BODY, METHOD FOR PRODUCING A RADIATION-EMITTING SEMICONDUCTOR BODY, AND RADIATION-EMITTING SEMICONDUCTOR COMPONENT
RADIATION-EMITTING SEMICONDUCTOR BODY, METHOD FOR PRODUCING A RADIATION-EMITTING SEMICONDUCTOR BODY, AND RADIATION-EMITTING SEMICONDUCTOR COMPONENT
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机译:辐射辐射型半导体本体,辐射辐射型半导体本体的制造方法以及辐射辐射型半导体元件
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摘要
A method is disclosed for producing a radiation-emitting semiconductor body (14) with the following steps: Providing an epitaxial semiconductor layer sequence (3) having an active zone (4) which is suitable for generating electromagnetic radiation, - applying a carrier layer (1) on a main side of the epitaxial semiconductor layer sequence (3), wherein the carrier layer (1) for the mechanical stabilization of the epitaxial semiconductor layer sequence (3) is provided Applying a joinable layer (11), - Forming of contact structures (9) by means of photolithography on the carrier layer (1), wherein the contact structures (9) each have a volume region (12) and a Oberflächenfügebereich (13) and wherein the contact structures are arranged on a back of the semiconductor body, which is a radiation-emitting Front is opposite characterized in that between the carrier layer (1) and the joinable layer (11), a further layer (10) made of the same material as the carrier layer (1) is applied.;Furthermore, a semiconductor body (14) and a component with a semiconductor body (14) are specified.
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