WAFER BOW REDUCTION IN COMPOSITE WAFER COMPRISING A SILICON WAFER AND A SILICON CARBIDE EPITAXIAL LAYER

摘要

We describe a method for reducing bow in a composite wafer comprising a silicon wafer and a silicon carbide layer grown on the silicon wafer. The method includes applying nitrogen atoms during the growth process of the silicon carbide layer on the silicon wafer so as to generate a compressive stress within the composite wafer.