REACTIVE SPUTTERING FILM DEPOSITION APPARATUS AND FILM DEPOSITION METHOD

摘要

PROBLEM TO BE SOLVED: To provide a technology capable of obtaining a stable film quality for a long period of time even when a film is consecutively deposited on multiple substrates by controlling a film deposition rate with a reactive sputtering method.SOLUTION: A reactive sputtering film deposition apparatus for depositing a film in either a chemical compound mode, a transition mode, or a metal mode using a target 3 and reactive gas. The apparatus has an introduction part 6 for introducing inert gas, an introduction part 7 for introducing reactive gas, and an electric power supply part 8 for supplying electric power to the target. In addition, the apparatus includes a detection part for detecting a plasma emission generated by supplying electric power to the target, and a control part 14 for adjusting a flow rate of reaction gas such that an emission intensity of a predetermined wavelength or an emission intensity calculation value of multiple wavelengths is maintained to be a designated value. The control part corrects the above designated value such that V/Vc, a ratio of a cathode voltage V of the electric power supply part which is detected during film deposition, and a cathode voltage Vc in the chemical compound mode becomes close to a predetermined value.SELECTED DRAWING: Figure 1