FinFET spacer etching method without fin recess and without gate-spacer pull-down

摘要

Providing a patterned feature extending from a substrate surface of the substrate, the patterned feature extending along the semiconductor portion and the top and sidewall regions of the semiconductor portion; Implanting first ions into the coating, wherein the first ions have a first trajectory along a direction perpendicular to the substrate surface, and the first ions are disposed along the top region. Forming an etched hardened portion of the cured hardened portion; and subjecting the coating to reactive etching with second ions, wherein the second ions form a non-zero angle with respect to the orthogonal direction. Reactive etching with a second trajectory removes the etch hardened portion at a first etching rate, the first etching rate is reactive etching And a lower step than the second etch rate when Oite second ions are directed into the top region of the uncured.