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Reduction of parasitic channel in III-nitride material semiconductor structure
Reduction of parasitic channel in III-nitride material semiconductor structure
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机译:减少III族氮化物材料半导体结构中的寄生沟道
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摘要
Group III nitride materials are generally described herein, including material structures including Group III nitride material regions and silicon containing substrates. Particular embodiments relate to gallium nitride materials and material structures including gallium nitride material regions and silicon containing substrates.
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