首页> 外国专利> METHOD OF CUTTING WORK-PIECE, METHOD OF CUTTING SILICON SINGLE CRYSTAL, AND METHOD OF MANUFACTURING SILICON WAFER

METHOD OF CUTTING WORK-PIECE, METHOD OF CUTTING SILICON SINGLE CRYSTAL, AND METHOD OF MANUFACTURING SILICON WAFER

机译:切割工件的方法,切割硅单晶的方法以及制造硅晶片的方法

摘要

PROBLEM TO BE SOLVED: To provide a method of cutting a work-piece capable of achieving long life of a blade.;SOLUTION: A method of cutting silicon single crystal S cuts silicon single crystal while supplying RO water having water temperature of 21°C or more and 40°C or less which is impurities removed water by a reverse osmosis membrane (an ultrafine particle filter of 0.0001 μm) onto a blade 4 of a band saw.;SELECTED DRAWING: Figure 6;COPYRIGHT: (C)2018,JPO&INPIT
机译:解决的问题:提供一种能够实现刀片的长寿命的切割工件的方法;解决方案:切割硅单晶的方法S在供应水温为21°C的RO水的同时切割硅单晶大于或等于40°C或更低的温度,这是通过反渗透膜(0.0001μm的超细颗粒过滤器)将水去除到带锯的刀片4上的图;选定的图纸:图6;版权:(C)2018,日本特许厅

著录项

  • 公开/公告号JP2018107295A

    专利类型

  • 公开/公告日2018-07-05

    原文格式PDF

  • 申请/专利权人 SUMCO CORP;

    申请/专利号JP20160252459

  • 发明设计人 KOTOOKA TOSHIRO;

    申请日2016-12-27

  • 分类号H01L21/304;C30B29/06;H01L21/66;

  • 国家 JP

  • 入库时间 2022-08-21 13:10:56

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