Gate stack materials for semiconductor applications to improve lithography overlay

摘要

Embodiments of the present disclosure provide a method and system for manufacturing a film layer with minimal lithographic overlay error on a semiconductor substrate. In one embodiment, a method of forming a film layer on a substrate includes providing a mixed deposition gas comprising a silicon-containing gas and a reactive gas on a substrate disposed on a substrate support in the processing chamber; Forming a plasma in the presence of a mixed deposition gas within, applying a current to a plasma profile modulator disposed within the processing chamber while supplying the mixed deposition gas into the processing chamber, and Rotating the substrate while depositing the film layer. [Selection] Figure 6