Advanced process flow for high quality FCVD film background

摘要

Embodiments described herein relate to a method of forming a fluidized chemical vapor deposition (FCVD) film suitable for applications that fill high aspect ratio gaps. The various process flows described include an ion implantation process that is used to process the deposited FCVD film to improve the density and material composition of the dielectric film. The ion implantation process, the curing process, and the annealing process can be used in various sequence combinations to form a dielectric film having an improved density at a temperature within the thermal history of the device material. Improved film quality characteristics include reduced film stress and reduced film shrinkage compared to conventional FCVD film formation processes. [Selection] Figure 3