Advanced process flow for high quality FCVD films

摘要

The embodiments described herein are directed to methods for forming suitable flow chemical vapor deposition (FCVD) films for high aspect ratio gap fill applications. The various process flows described include ion implantation processes utilized to treat deposited FCVD films to improve dielectric film density and material composition. Ion implantation processes, curing processes, and annealing processes can be utilized in various sequence combinations to form dielectric films with improved densities at temperatures within the thermal budget of the device materials. The improved film quality properties include reduced film stress and reduced film shrinkage as compared to conventional FCVD film forming processes.