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Method for analyzing trace impurities and plasma torch used for the analysis

机译:分析痕量杂质的方法和用于分析的等离子炬

摘要

PROBLEM TO BE SOLVED: To provide a method for highly sensitively analyzing trace impurities included in a sample liquid obtained by diluting an organometallic compound with an inactive organic solvent, and a plasma torch for use in the analysis.SOLUTION: A plasma torch includes a plasma gas pipe, and a carrier gas pipe in the inside thereof, where a tip end of the carrier gas pipe is located at a lower part with respect to a tip end of the plasma gas pipe, and when the inside diameter of the plasma gas tube is defined as R (mm) and the length between the tip end of the plasma gas pipe and the tip end of the carrier gas pipe is defined as L (mm), the plasma torch satisfies (R/L)×100 is 20%-40%. The method for analyzing trace impurities includes: atomizing a sample liquid obtained by diluting an organometallic compound with an inactive organic solvent; then introducing the atomized sample into the plasma torch along with the carrier gas via the carrier gas pipe; and analyzing the trace impurities in the sample liquid by an inductively-coupled plasma emission spectrometry method.
机译:解决的问题:提供一种用于高灵敏度地分析通过用惰性有机溶剂稀释有机金属化合物而获得的样品液体中所含痕量杂质的方法,以及用于分析的等离子炬。解决方案:等离子炬包括等离子体气体管,以及在其内部的载气管,其中载气管的尖端相对于等离子气管的尖端位于下部,并且当等离子气管的内径定义为R(mm),等离子气管的尖端与载气管的尖端之间的长度定义为L(mm),等离子炬满足(R / L)×100为20% -40%分析痕量杂质的方法包括:将通过用惰性有机溶剂稀释有机金属化合物而获得的样品液体雾化;然后通过载气管将雾化的样品与载气一起引入等离子炬。通过电感耦合等离子体发射光谱法分析样品液中的痕量杂质。

著录项

  • 公开/公告号JP6398206B2

    专利类型

  • 公开/公告日2018-10-03

    原文格式PDF

  • 申请/专利权人 宇部興産株式会社;

    申请/专利号JP20140014946

  • 发明设计人 山中 英治;宮地 ちひろ;

    申请日2014-01-29

  • 分类号G01N21/73;

  • 国家 JP

  • 入库时间 2022-08-21 13:09:39

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