Quantum dot electronic device and quantum dot transfer printing method

摘要

A quantum dot electronic device and a quantum dot transfer printing method are provided. A quantum dot electronic device according to the present invention includes a first encapsulation layer, a first electrode disposed on the first encapsulation layer, and a quantum disposed on the first electrode. A dot pattern; a second electrode disposed on the quantum dot pattern; and a second encapsulation layer disposed on the second electrode. The quantum dot pattern can be formed by a quantum dot transfer printing method. The quantum dot transfer printing method includes a step of forming a quantum dot layer on a donor substrate, a step of picking up the quantum dot layer using a stamp, and a step of bringing the quantum dot layer into contact with an intaglio substrate using the stamp And separating the stamp from the intaglio substrate. An ultra-small quantum dot pattern can be transferred at a high transfer rate by the quantum dot transfer printing method. As a result, a highly integrated quantum dot electronic device with excellent performance and an ultra-thin quantum dot electronic device with high resolution can be realized. [Selection] Figure 6