Improved beam profiling speed for scanning beam injectors

摘要

An ion implantation system and method is provided in which an ion beam is tuned according to a first process recipe. In order to define a first scanning ion beam, the ion beam is scanned along the scanning plane with a first frequency. In order to define a first beam profile associated with the first scanning ion beam, the beam profiling apparatus is moved through the first scanning ion beam, and with respect to the width direction of the scanning ion beam, One or more identifications of the first scanning ion beam are measured. Subsequently, the ion beam is scanned at a second frequency lower than the first frequency to define a second scanned ion beam. A second beam profile associated with the second scanning ion beam is determined based at least in part on the first beam profile. Subsequently, ions are implanted into the workpiece using a second scanning ion beam.