首页>
外国专利>
Integrated structure of MEMS pressure sensor and MEMS inertial sensor
Integrated structure of MEMS pressure sensor and MEMS inertial sensor
展开▼
机译:MEMS压力传感器与MEMS惯性传感器的集成结构
展开▼
页面导航
摘要
著录项
相似文献
摘要
The present invention discloses an integrated structure of a MEMS pressure sensor and a MEMS inertial sensor. An insulating layer formed on the substrate, each including a first lower electrode and a second lower electrode formed on the insulating layer, and further, a first upper electrode constituting a barometric pressure sensing capacitor together with the first lower electrode, and a second An inertial sensing structure that includes a second upper electrode that constitutes a standard capacitor together with the lower electrode and is supported above the substrate via a third support, and a fixed pole that constitutes an inertial detection capacitor of the inertial sensor together with the inertial sensing structure And a cover for packaging an inertial detection capacitor constituted by an inertial sensing structure and a fixed plate on the substrate. The integrated structure of the present invention integrates the MEMS inertial sensor and the MEMS pressure sensor on the same substrate, thereby effectively reducing the area of the chip and reducing the cost of the chip. The entire package can be accomplished, reducing the cost of the chip package.
展开▼