Method for manufacturing insulated gate type switching element and insulated gate type switching element

摘要

A method is provided for manufacturing an insulated gate type switching device. The method includes: implanting second conductivity type impurities into a surface of a semiconductor substrate so as to form a second region of a second conductivity type in the surface; forming a third region of the second conductivity type having a second conductivity type impurity density lower than the second region on the surface by epitaxial growth: and forming a trench gate electrode.