Method for manufacturing a semiconductor device having a Schottky diode and a high electron mobility transistor

摘要

The present invention is related to semiconductor device comprising a Schottky diode (10) and a High Electron Mobility Transistor (20), formed on a III-nitride stack comprising at least a lower and an upper III-nitride layer (3,4) forming a heterojunction there between, so that a 2DEG layer (5) may be formed in the lower of the two layers. The 2DEG layers serves as the charge carrier for both the diode and the HEMT. In the device of the invention, a doped III-nitride layers is present between a portion of the anode of the diode and the III-nitride stack, said portion being located between the diode's Schottky junction and the cathode, and a further layer of doped III-nitride material is present between the gate electrode of the HEMT and the III-nitride stack. The thickness of said III-nitride layers is not equal, so that the turn-on voltage of the diode and the threshold voltage of the HEMT are tuned according to specific requirements. The invention equally involves a method of producing such a device.