Nitride semiconductor laminate, method for producing nitride semiconductor laminate, method for producing semiconductor laminate, and method for inspecting semiconductor laminate

摘要

There is provided a nitride semiconductor laminate, including: a substrate; an electron transit layer provided on the substrate and containing a group III nitride semiconductor; and an electron supply layer provided on the electron transit layer and containing a group III nitride semiconductor, wherein a surface force A of the electron supply layer acting as an attractive force for attracting a probe and a surface of the electron supply layer when measured using the probe consisting of a glass sphere with a diameter of 1 mm covered with Cr, is stronger than a surface force B of Pt when measured under the same condition, and an absolute value | A - B | of a difference between them is 30 µN or more.