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NITRIDE SEMICONDUCTOR LAMINATE, METHOD FOR MANUFACTURING NITRIDE SEMICONDUCTOR LAMINATE, METHOD FOR MANUFACTURING SEMICONDUCTOR LAMINATE, AND METHOD FOR INSPECTING SEMICONDUCTOR LAMINATE
NITRIDE SEMICONDUCTOR LAMINATE, METHOD FOR MANUFACTURING NITRIDE SEMICONDUCTOR LAMINATE, METHOD FOR MANUFACTURING SEMICONDUCTOR LAMINATE, AND METHOD FOR INSPECTING SEMICONDUCTOR LAMINATE
There is provided a nitride semiconductor laminate, including: a substrate; an electron transit layer provided on the substrate and containing a group III nitride semiconductor; and an electron supply layer provided on the electron transit layer and containing a group III nitride semiconductor, wherein a surface force A of the electron supply layer acting as an attractive force for attracting a probe and a surface of the electron supply layer when measured using the probe consisting of a glass sphere with a diameter of 1 mm covered with Cr, is stronger than a surface force B of Pt when measured under the same condition, and an absolute value |A−B| of a difference between them is 30 μN or more.
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机译:提供了一种氮化物半导体层压板,包括:基板;电子传输层,其设置在基板上并包含III族氮化物半导体;以及设置在电子传输层上并包含III族氮化物半导体的电子供应层,其中当使用所述电子供应层进行测量时,所述电子供应层的表面力A充当用于吸引探针的吸引力和所述电子供应层的表面。在相同条件下进行测量时,由直径1 mm的玻璃球覆盖Cr构成的探头比Pt的表面力B强,并且绝对值| AB |。它们之间的差异为30μN或更大。
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