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Method for producing g-C3N4 film and use thereof

机译:g-C3N4膜的制造方法及其用途

摘要

In order to provide g-C3N4 capable of being simply and easily handled, a g-C3N4 film is produced by heating, as a starting material, a compound represented by X+mYm−, wherein X+ is a guanidium ion or the like ion, and Ym− is an anion, to vaporize the compound or its reactant, and depositing the compound or the reactant over a surface of a base material heated, the surface carrying negative electric charges or having π electrons, so that the compound or the reactant is polymerized on the base material to generate g-C3N4.
机译:为了提供能够简单容易地处理的g-C3N4,通过加热以X + mYm-表示的化合物作为起始原料来制造g-C3N4膜,其中,X +是胍离子等, Ym-为阴离子,以使化合物或其反应物汽化,并将该化合物或反应物沉积在加热的基材表面上,该表面带有负电荷或具有π电子,因此该化合物或反应物为在基础材料上聚合生成g-C3N4。

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