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Method for forming iron oxide film and iron oxide film

机译:氧化铁膜的形成方法及氧化铁膜

摘要

PROBLEM TO BE SOLVED: To provide a formation method of an iron oxide (triiron tetraoxide) film, which maintains hardness of a substrate (a ferrous material or a ferrous component), suppresses formation of iron sesquioxide as much as possible, and can effectively form a triiron tetraoxide film in relatively short time, and the iron oxide film using the method.SOLUTION: In a formation method of an iron oxide film according to the invention, a substrate 5 (a ferrous material or a ferrous component) is placed in a film deposition chamber 3 within a vacuum film deposition apparatus 1 including the film deposition chamber 3 and a pressure gradient type electron gun 4. Then an iron oxide (FeO)film is formed on a surface of the substrate 5 by introducing oxygen gas to the film deposition chamber 3 while a plasma region 20 is generated in the film deposition chamber 3 using the pressure gradient type electron gun 4 by applying a negative bias voltage to the substrate 5 (a ferrous material or a ferrous component).
机译:解决的问题:提供一种形成氧化铁(四氧化三铁)膜的方法,该方法可以保持基材(铁类材料或铁类成分)的硬度,尽可能地抑制倍半氧化铁的形成,并且可以有效地形成解决方案:在根据本发明的氧化铁膜的形成方法中,将基板5(含铁材料或含铁成分)放置在在包括膜沉积室3和压力梯度型电子枪4的真空膜沉积设备1中的膜沉积室3中。然后,通过向膜5中引入氧气,在基底5的表面上形成氧化铁(FeO)膜。通过使用负压力将负偏压施加到基板5(含铁材料或金属)上,使用压力梯度型电子枪4在膜沉积室3中产生等离子体区域20铁成分)。

著录项

  • 公开/公告号JP6283942B2

    专利类型

  • 公开/公告日2018-02-28

    原文格式PDF

  • 申请/专利权人 株式会社不二越;

    申请/专利号JP20140106907

  • 发明设计人 山本 浩嗣;

    申请日2014-05-23

  • 分类号C23C8/38;H01F10/20;H01F10/28;

  • 国家 JP

  • 入库时间 2022-08-21 13:07:24

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