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Microfabricated ultrasonic transducer device with metal-semiconductor contact for capacitive crosstalk reduction
Microfabricated ultrasonic transducer device with metal-semiconductor contact for capacitive crosstalk reduction
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机译:具有金属-半导体触点以减小电容串扰的超细超声传感器
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摘要
Embodiments reduce capacitive cross-talk between micromachined ultrasonic transducer (MUT) arrays through grounding of the substrate over which the arrays are fabricated. In embodiments, a metal-semiconductor contact is formed to a semiconductor device layer of a substrate and coupled to a ground plane common to a first electrode of the transducer elements to suppress capacitive coupling of signal lines connected to a second electrode of the transducer elements.
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